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MSM5718B70 - 18-Megabit RDRAM (2M x 9)

MSM5718B70_1149906.PDF Datasheet


 Full text search : 18-Megabit RDRAM (2M x 9)
 Product Description search : 18-Megabit RDRAM (2M x 9)


 Related Part Number
PART Description Maker
KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
Samsung Electronic
SAMSUNG[Samsung semiconductor]
K4R271669D-TCS8 K4R271669D K4R271669D-T 128Mbit RDRAM(D-die)
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
K4R881869I-DC Direct RDRAM Product Guide
Samsung semiconductor
SST31LH041 31LH041 4 Megabit Flash 1 Megabit SRAM ComboMemory
From old datasheet system
SST
MSM5716C50 (MSM5716C50 / MSM5718C50 / MSM5764802) 16M / 18M / 64M Concurrent RDRAM
OKI
K4R881869 K4R881869M K4R881869M-NCK8 K4R881869M-NB 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
Samsung Electronic
SAMSUNG [Samsung semiconductor]
SAMSUNG[Samsung semiconductor]
AT45BR3214B AT45BR3214B-C1 32-MEGABIT DATAFLASH 4-MEGABIT SRAM STACK MEMORY
Atmel Corp.
AT45BR3214B AT45BR3214B-C1 32-MEGABIT DATAFLASH 4-MEGABIT SRAM STACK MEMORY
ATMEL Corporation
MT6V16M16 MT6V16M18 512K x 16 x 32 banks RDRAM(512K x 16 x 32同步动态RAM)
512K x 18 x 32 banks RDRAM(512K x 18 x 32同步动态RAM)
Micron Technology, Inc.
S29CD016G0JFAA002 S29CD016G0JFAA012 S29CD016G0JFAA 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
SPANSION[SPANSION]
S29GL064N11BAIV10 S29GL064N11FAIV12 S29GL064N11BFI 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 64兆,32兆位3.0伏只页面模式闪存具有110纳米MirrorBit工艺技
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
Spansion Inc.
PROM
Spansion, Inc.
SPANSION LLC
 
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