| PART |
Description |
Maker |
| KM416V1204BJ KM416V1004BT-L7 KM416V1204BT-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns
1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT
|
Samsung Electronic
Samsung semiconductor
|
| GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216 |
30ns; 64K x 16 CMOS dynamic RAM with extended data output
35ns; 64K x 16 CMOS dynamic RAM with extended data output
40ns; 64K x 16 CMOS dynamic RAM with extended data output
45ns; 64K x 16 CMOS dynamic RAM with extended data output
|
G-LINK Technology
|
| K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4E160411D K4E160412D K4E170411D K4E170412D K4E167 |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM48C8104B KM48C8004B KM48C8004BK-6 KM48C8004BS-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 60ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4E641612B-L K4E661612B K4E661612B-L K4E661612B-TC |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4E641612C-TL45 K4E661612C-TL45 K4E641612C-60 K4E6 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4E640412E-TI45 K4E640412E-TI50 K4E640412E-TI60 K4 |
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
|
| HCMS-235 HCMS-2351 HCMS-2353 HCMS-235X |
HCMS-2351 · CMOS Extended Temperature Range 5x7 Alphanumeric Display
CMOS Extended Temperature Range 5 x 7 Alphanumeric Display
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| HY5116404B |
(HY5116404B / HY5117404B) Extended Data Out Mode
|
Hyundai Electronics
|
| MAX161 MAX161ACPI MAX161ACWI MAX161AEPI MAX161AEWI |
CMOS, 20µs, 8-Bit, 8-Channel Data Acquisition System
CMOS 8-Bit 8-Channel Data Acquisition System
CMOS 8Bits 8 Channel DAS(CMOS 8 通道数据采集系统)
16-Bit Ultra-Low-Power MCU, 116KB Flash, 8KB RAM, 12-Bit ADC, Dual DAC, DMA, 3 OPAMP, 160 Seg LCD 100-LQFP -40 to 85 8-CH 8-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, CDIP28
CMOS 8-Bit 8Channel Data Acquisition System 8-CH 8-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDIP28
CMOS 8-Bit 8Channel Data Acquisition System 8-CH 8-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, CDIP28
CMOS 8-Bit 8Channel Data Acquisition System 8-CH 8-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDSO28
CMOS 8-Bit 8Channel Data Acquisition System CMOS0µs位通道数据采集系统
|
MAXIM - Dallas Semiconductor
http://
Maixm
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
