| PART |
Description |
Maker |
| HY64SD16162B-DF85E |
1M x 16 bit Low Low Power 1T/1C Pseudo SRAM 1M X 16 PSEUDO STATIC RAM, 85 ns, PBGA48
|
Hynix Semiconductor, Inc.
|
| HY64UD16162B-DF70I |
1M x 16 bit Low Low Power 1T/1C Pseudo SRAM 1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48
|
Hynix Semiconductor, Inc.
|
| EM566169BC-60 EM566169BC-65 EM566169BC-85 EM566169 |
1M x 16 Pseudo SRAM
|
ETRON[Etron Technology, Inc.]
|
| LC331632M-10 LC331632M-12 LC331632M-70 LC331632M-8 |
512K (32768 words X 16 bits) Pseudo-SRAM
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| N32T1630C1CZ-70I N32T1630C1C N32T1630C1CZ |
32Mb Ultra-Low Power Asynchronous CMOS Pseudo SRAM
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| TV00570002CDGB TV00570003CDGB |
(TV00570002CDGB / TV00570003CDGB) Pseudo SRAM and NOR Flash Memory Mixed Multi-Chip Package
|
Toshiba
|
| CYK001M16ZCCAU-70BAI CYK001M16ZCCA CYK001M16ZCCAU- |
1M X 16 PSEUDO STATIC RAM, 55 ns, PBGA48 6 X 8 MM, 1.20 MM HEIGHT, FBGA-48
1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1.20 MM HEIGHT, FBGA-48
16-Mbit (1M x 16) Pseudo Static RAM
CAP 1000PF 1000V 5% NP0(C0G) SMD-1812 TR-7 PLATED-NI/SN 1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| M24L216128SA-70BEG M24L216128SA-70BIG M24L216128SA |
128K X 16 PSEUDO STATIC RAM, 55 ns, PDSO44 0.400 INCH, LEAD FREE, TSOP2-44
2-Mbit (128K x 16) Pseudo Static RAM
|
Sharp Electronics, Corp.
Elite Semiconductor Memory Technology Inc.
|
| CYU01M16SFEU-70BVXI |
16-Mbit (1M x 16) Pseudo Static RAM 1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CYK512K16SCAU-55BAXI CYK512K16SCAU-70BAXI CYK512K1 |
512K X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1.20 MM HEIGHT, LEAD FREE, MO-207, FBGA-48
512K X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1.20 MM HEIGHT, MO-207, FBGA-48
512K X 16 PSEUDO STATIC RAM, 55 ns, PBGA48 6 X 8 MM, 1.20 MM HEIGHT, MO-207, FBGA-48
8-Mbit (512K x 16) Pseudo Static RAM
|
Cypress Semiconductor, Corp.
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| CYK256K16SCBU-55BVXI CYK256K16SCCBU-55BVI CYK256K1 |
4-Mbit (256K x 16) Pseudo Static RAM 256K X 16 PSEUDO STATIC RAM, 55 ns, PBGA48
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
