| PART |
Description |
Maker |
| DER-40 |
21W (45W peak) Multiple Output Power Supply using TOP246Y
|
POWERINT[Power Integrations, Inc.]
|
| MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFS45V2123A |
2.1 - 2.3GHz BAND 32W INTERNALLY MATCHD GaAs FET
2.1-2.3 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| AR14-HZL01-TT-R |
TITLE IC-Socket, 14pin, Machined Contacts
|
Assmann Electronics Inc.
|
| AN7164N |
BTL 47W Audio Power Amplifier Circuit
|
PANASONIC[Panasonic Semiconductor]
|
| EMC1438-2-AP-TR EMC1438-1-AP-TR |
1°C Multiple Temperature Sensor with Hardware Controlled Standby & Hottest of Multiple Zones
|
SMSC Corporation
|
| NTE7169 |
Integrated Circuit Audio Power Amplifier, 32W
|
NTE Electronics
|
| MGFS45V2325A_04 MGFS45V2325A MGFS45V2325A04 |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC45V5964A |
5.9-6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC45V3436A_04 MGFC45V3436A MGFC45V3436A04 |
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
