| PART |
Description |
Maker |
| KI4923DY |
TrenchFET Power MOSFETS Advanced High Cell Density Process
|
TY Semiconductor Co., Ltd
|
| UB3010 |
N-Ch 30V Fast Switching MOSFETs
N-Ch 30V Fast Switching MOSFETs Advanced high cell density Trench technology
|
Unitpower Technology Limited
Unitpower Technology Li...
|
| TSM2307CXRF |
High Density Cell Design for Ultra Low On-resistance
|
TY Semiconductor Co., L...
|
| TSM3400CXRF |
High Density Cell Design for Ultra Low On-resistance
|
TY Semiconductor Co., Ltd
|
| AMS2319 |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| 2N7000 |
High density cell design for low RDS(ON) Voltage controlled small signal switch
|
TY Semiconductor Co., Ltd
|
| LG50N10 |
High density cell design for ultra low Rdson
|
Shenzhen Luguang Electr...
|
| WPM3012 WPM3012-3 WPM3012-3TR |
Single P-Channel, -30V, -3.1A, Power MOSFET Supper high density cell design
|
TY Semiconductor Co., Ltd
|
| LS17500 |
3.6V Primary lithium-thionyl chloride (Li-SOCl2)High energy density A-size bobbin cell
|
SAFT
|
| STN4346 |
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4480 |
STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4426 |
STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
