| PART |
Description |
Maker |
| BLF0810-180 BLF0810S-180 |
Base station LDMOS transistors
|
NXP Semiconductors
Philips Semiconductors
|
| BLF6G21-10G |
Power LDMOS transistor
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
| SD1390 |
RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS
|
ST Microelectronics
|
| SD4701 2872 |
RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS
From old datasheet system
|
ST Microelectronics
STMicroelectronics
|
| SD1390 4671 |
From old datasheet system
RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS
|
STMICROELECTRONICS[STMicroelectronics]
|
| SD1423 2798 |
From old datasheet system
RF & MICROWAVE TRANSISTORS 800-960MHz BASE STATION APPLICATIONS
|
STMICROELECTRONICS[STMicroelectronics]
|
| BLF6G22-180RN BLF6G22LS-180RN |
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Power LDMOS transistor BLF6G22-180RN<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
Power LDMOS transistor BLF6G22-180RN<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF6G22-180PN BLF6G22LS-180PN NXPSEMICONDUCTORSN.V |
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
Power LDMOS transistor BLF6G22LS-180PN<SOT539B (CDFM4)|<<http://www.nxp.com/packages/SOT539B.html<1<Always Pb-free,;BLF6G22LS-180PN<SOT539B (CDFM4)|<<http://www.nxp.com/packages/SOT539B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| TMS3705A1DRG4 RI-TMS3705ADR08 RI-TMS3705ADR |
LF BASE STATION IC
|
Pericom Semiconductor Corporation
|
