| PART |
Description |
Maker |
| F5D3 F5D1 F5D2 F5D1B |
AlGaAs INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 880 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| LN59-LNA2702L LNA2702L LN59 |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
Panasonic Corporation
Panasonic Semiconductor
|
| SIR-563ST3F07 |
Infrared light emitting diode, top view type
5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Rohm
|
| ASDL-4772-C41 ASDL-4772-C22 |
1.6 mm, 1 ELEMENT, INFRARED LED, 940 nm
High Performance Side look AlGaAs/GaAs Infrared (940nm) Lamp
|
Lite-On Technology, Corp.
AVAGO TECHNOLOGIES LIMITED
|
| BIR-BO18V4V-2 BIR-BO18E4G-2 BIR-BN08E4G-2 |
4.98 mm, 1 ELEMENT, INFRARED LED, 850 nm
5 mm, 1 ELEMENT, INFRARED LED, 850 nm
5 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
American Bright Optoelectronics, Corp.
AMERICAN BRIGHT OPTOELECTRONICS CORP
|
| STS7103 |
Infrared LED, 3.9 mm, 1 ELEMENT, INFRARED LED, 950 nm, HERMETIC SEALED, TO-18, 2 PIN
|
Vishay Semiconductors
|
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| HSDL-4200 HSDL-42001 HSDL-4220 |
High-Performance T-13/4 (5mm) TS alGaAs Infrared (875nm) Lamp 5 mm, 1 ELEMENT, INFRARED LED, 875 nm
High-Performance T-13/4 (5 mm) TS AlGaAs Infrared (875 nm) Lamp
|
Lite-On Technology, Corp.
Agilent(Hewlett-Packard)
|
| 5202CS21 5202CS12 |
5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
VISHAY TELEFUNKEN
TEMIC SEMICONDUCTORS
|
| QED221.A4A0 |
5 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
QT OPTOELECTRONICS
|
| TSMF4710-GS08 |
2.4 mm, 1 ELEMENT, INFRARED LED, 870 nm
|
VISHAY SEMICONDUCTORS
|
