| PART |
Description |
Maker |
| CY7C1303BV18-100BZC CY7C1306BV18-100BZC CY7C1303BV |
18-Mbit Burst of 2 Pipelined SRAM with QD(TM) Architecture
18-Mbit Burst of 2 Pipelined SRAM with QDR Architecture
18-Mbit Burst of 2 Pipelined SRAM with QDR垄芒 Architecture
18-Mbit Burst of 2 Pipelined SRAM with QDR?Architecture
|
Cypress Semiconductor
|
| CY7C1303BV25-100BZXC CY7C1306BV25-100BZXC |
18-Mbit Burst of 2 Pipelined SRAM with QD(TM) Architecture
|
Cypress
|
| CY7C1303BV25-167BZC CY7C1306BV25-167BZC CY7C1303BV |
18-Mbit Burst of 2 Pipelined SRAM with QDR Architecture
|
Cypress Semiconductor
|
| CY7C1307BV25-167BZC |
18-Mbit Burst of 4 Pipelined SRAM with QDR⑩ Architecture
|
Cypress Semiconductor
|
| CY7C1305BV25-167BZI CY7C1305BV25-167BZXC CY7C1305B |
18-Mbit Burst of 4 Pipelined SRAM with QDR⑩ Architecture
|
Cypress Semiconductor
|
| CY7C1305BV25-133BZC CY7C1307BV25-133BZC CY7C1307BV |
18-Mbit Burst of 4 Pipelined SRAM with QDR Architecture
|
Cypress Semiconductor Corp.
|
| CY7C1352F CY7C1352F-100AC CY7C1352F-100AI CY7C1352 |
4-Mbit (256Kx18) Pipelined SRAM with NoBLArchitecture 256K X 18 ZBT SRAM, 2.8 ns, PQFP100
4-Mbit (256Kx18) Pipelined SRAM with NoBL(TM) Architecture
4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture
4-Mbit (256Kx18) Pipelined SRAM with NoBL⑩ Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| IDT71V3558SA133PFGI IDT71V3558SA100BGG IDT71V3558S |
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O
128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O/ Burst Counter Pipelined Outputs
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PQFP100
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PQFP100
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.3V的I / O的脉冲计数器输出流水
TV 6C 6#12 SKT WALL RECP
Circular Connector; No. of Contacts:41; Series:D38999; Body Material:Metal; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41
|
IDT
Integrated Device Technology, Inc.
|
| M36L0R8060T1ZAQE M36L0R8060T1ZAQF M36L0R8060T1ZAQT |
256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| M36LLR8760B1 M36LLR8760M1 M36LLR8760TT M36LLR8760D |
256 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
意法半导
STMicroelectronics
ST Microelectronics
|
| CY7C1470V25 CY7C1470V25-167ACES CY7C1470V25-167AXC |
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL?/a> Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 3.4 ns, PQFP100
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 1M X 72 ZBT SRAM, 3 ns, PBGA209
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp.
SRAM
Cypress Semiconductor, Corp.
|
