| PART |
Description |
Maker |
| BFC12 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC15 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC43 |
4TH GENERATION MOSFET
|
TT electronics Semelab Limited
Seme LAB
|
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| GT30J122 |
4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING
|
Toshiba Corporation
Toshiba Semiconductor
|
| GT60N321 EA09964 |
High Power Switching Applications The 4th Generation
From old datasheet system
|
Toshiba
|
| USB2602 |
(USB2601 / USB2602) 4th Generation USB2.0 Flash Media Controller
|
SMSC Corporation
|
| PS22053 |
1200V/10A low-loss 4th generation IGBT inverter bridge
|
Mitsubishi Electric Semiconductor
|
| GT60J322 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications
|
TOSHIBA
|
| GT60J322 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
The 4th Generation Soft Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| GT50G321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
|
TOSHIBA
|
| PS22056 PS2205612 |
Dual-In-Line Package Intelligent Power Module
1200V/25A low-loss 4th generation IGBT inverter bridge
|
Mitsubishi Electric Semiconductor
|
