| PART |
Description |
Maker |
| WED3DG6466V10D2 WED3DG6466V7D2 WED3DG6466V75D2 WED |
512MB -64Mx64, SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3EG6465S265D4C W3EG6465S263D4C W3EG6465S262D4C W3 |
512MB- 64Mx64 DDR SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| HYMD264646AL8-H HYMD264646AL8-K HYMD264646A8-H HYM |
Unbuffered DDR SDRAM DIMM
64Mx64|2.5V|M/K/H/L|x16|DDR SDRAM - Unbuffered DIMM 512MB
|
Hynix Semiconductor
|
| W3EG7264S-AD4 |
512MB - 2x32Mx72 DDR ECC SDRAM UNBUFFERED w/PLL 512MB 2x32Mx72的DDR ECC的内存缓冲瓦锁相
|
Optrex America, Inc.
|
| EBE51UD8AEFA-5C-E EBE51UD8AEFA-4A-E |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank) 512MB的无缓冲DDR2 SDRAM DIMM内存400字64位，1个等级）
|
Elpida Memory, Inc.
|
| EBE51ED8ABFA-5C-E EBE51ED8ABFA-4A-E |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
KPT SERIES 512MB的无缓冲DDR2 SDRAM DIMM内存400字72位，1个等级）
|
Elpida Memory, Inc.
|
| HYM72V64736T8 HYM72V64736LT8-H |
64Mx72|3.3V|K/H|x18|SDR SDRAM - Unbuffered DIMM 512MB 64Mx72 | 3.3 | | x18 | SDRAM的特别提款权-无缓冲DIMM 512MB
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Samsung Semiconductor Co., Ltd.
HYNIX SEMICONDUCTOR INC
|
| EM44BM1684LBB-3F |
512Mb (8M隆驴4Bank隆驴16) Double DATA RATE 2 SDRAM
512Mb (8M×4Bank×16) Double DATA RATE 2 SDRAM
|
Eorex Corporation
|
| AS4DDR264M65PBG1R-38_ET AS4DDR264M65PBG1R-38_IT AS |
64Mx64 DDR2 SDRAM w/ DUAL CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit
|
Austin Semiconductor
|
| M366S6453DTU |
64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs Data Sheet
|
Samsung Electronic
|
| M464S6554MTS |
64Mx64 SDRAM SODIMM based on 32Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
