| PART |
Description |
Maker |
| M470L1714BT0-CLB0 M470L1714BT0-CLA0 M470L1714BT0-C |
16Mx64 200pin DDR SDRAM SODIMM based on 8Mx16 Data Sheet
128MB DDR SDRAM MODULE(16Mx64 based on 8Mx16 DDR SDRAM)
|
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| W3DG6418V10AD1 W3DG6418V7AD1 W3DG6418V75AD1 W3DG64 |
128MB - 16Mx64 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3DG6418V75D1 W3DG6418V75JD1 |
128MB - 16Mx64 SDRAM UNBUFFERED
|
White Electronic Design...
|
| W3DG6418V7D1 W3DG6418V75D1 W3DG6418V10D1 W3DG6418V |
128MB - 16Mx64 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| HYM71V16635HCT8 |
16Mx64|3.3V|K/H|x8|SDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
|
| V436516Y04VATG-75PC V436516Y04V V436516Y04VATG-10P |
ER 7C 7#8 SKT RECP BOX
128MB 144-PIN UNBUFFERED SDRAM SODIMM, 16MX64 3.3VOLT
|
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| NT128S64VH8C0GM-75B NT128S64VH8C0GM-8B |
128Mb: 16Mx64 SDRAM SODIMM based 8Mx16, 4bands, 4K refresh, 3.3V synchronous DRAMs with SPD
|
NANYA
|
| NT128S64VH4A0GM0-7K |
128Mb: 16Mx64 SDRAM SODIMM based 16Mx16, 4bands, 8K refresh, 3.3V synchronous DRAMs with SPD
|
NANYA
|
| HYMD2166466 HYMD216646L6 HYMD2166466-H |
16Mx64|2.5V|K/H/L|x4|DDR SDRAM - Unbuffered DIMM 128MB
16M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
HYNIX SEMICONDUCTOR INC
|
| HYB25D128160AT-6 HYB25D128400AT-7 HYB25D128800AT-7 |
DDR SDRAM Components - 128Mb (8Mx16) DDR333 (2.5-3-3)
DDR SDRAM Components - 128Mb (32Mx4) DDR266A (2-3-3)
DDR SDRAM Components - 128Mb (16mx8) DDR266A (2-3-3)
128 Mbit Double Data Rate SDRAM
|
Infineon
|
| HYS72V32301GR-7.5 HYS72V64300GR-7.5 HYS72V16300GR- |
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块)
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块)
3.3V 1GB SDRAM Module(3.3V 1GSDRAM 模块)
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3 256MB的内存模块（3.3 256M位内存模块）
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3 128MB的内存模块（3.3V28兆位内存模块
|
SIEMENS AG
|
