| PART |
Description |
Maker |
| BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| THN6301KF THN6301U THN6301S THN6301E THN6301Z |
SiGe NPN Transistor
|
AUK corp
|
| THN6701B |
SiGe NPN Transistor
|
AUK corp
|
| THN4301E THN4301U THN4301Z |
SiGe NPN Transistor
|
AUK corp
|
| THN6301 THN6301E THN6301KF THN6301S THN6301U THN63 |
NPN SiGe RF TRANSISTOR
|
Tachyonics CO,. LTD
|
| NESG2046M33-T3-A NESG2046M33 NESG2046M33-A |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION 邻舍npn型硅锗晶体管低噪声，高增益放
NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| BFU540 |
NPN SiGe wideband transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| THN6701B |
NPN SiGe RF POWER TRANSISTOR
|
Tachyonics CO,. LTD
|
| NESG2101M05-T1-A |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
California Eastern Laboratories
|
| NESG2021M16-T3-A NESG2021M16 NESG2021M16-T3 |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR
|
CALMIRCO[California Micro Devices Corp]
|
| NESG210719-T1-A |
NPN SiGe RF Transistor for Low Noise, High-Gain
|
Renesas Electronics Corporation
|
| NESG2021M05-A NESG2021M05-T1 NESG2021M05-T1-A |
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
|
Renesas Electronics Corporation
|
