| PART |
Description |
Maker |
| TLP581 TLP580 |
GaAIAs INFRARED EMITTING DIODE AND NPN SILICON PHOTO-TRANSISTOR
|
List of Unclassifed Manufacturers
ETC
|
| KFL-1ML-N |
Infrared Emitting Diodes(GaAIAs)
|
http://
KODENSHI[KODENSHI KOREA CORP.]
Kondenshi Corp
|
| OP245D OP245A OP245B OP245C |
GAAIAS PLASTIC INFRARED EMITTING DIODES
|
Optek Technology
ETC
OPTEK[OPTEK Technologies]
|
| MIE-514H4 514H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| MIE-524H4 524H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| MIE-546A2U 546A2U |
AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE 的AlGaAs /砷化镓的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (UL Listed)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| MIE-556L3U MIE-546L3U 556L3U |
Infrared Emitting Diodes (UL Listed)
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| Q62703-Q1547 Q62703-Q1093 SFH484_5 Q62703-Q1092 SF |
From old datasheet system
GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters 880 nm 镓铝砷红外光Lumineszenzdioden 880纳米镓铝砷红外辐射器880纳米
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| AA3528AF3C |
2.4 mm, 1 ELEMENT, INFRARED LED, 940 nm
3.5x2.8 mm INFRARED EMITTING DIODE
|
Kingbright Corporation
|
