| PART |
Description |
Maker |
| TSD4M150 TSD4M150F TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): -20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits
|
SGS Thomson Microelectronics
STMicroelectronics
ST Microelectronics
|
| IRF5NJ540 |
Avalanche Energy Ratings
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.052ohm, Id=22A*)
SURFACE MOUNT (SMD-0.5)100V, N-CHANNEL
100V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package
|
IRF[International Rectifier]
|
| ZXMP10A17E6Q-15 |
100V P-CHANNEL ENHANCEMENT MODE MOSFET
|
Diodes Incorporated
|
| ZXMP10A17E6-15 |
100V P-CHANNEL ENHANCEMENT MODE MOSFET
|
Diodes Incorporated
|
| ZXMN10A11KTC |
100V N-CHANNEL ENHANCEMENT MODE MOSFET
|
Diodes Incorporated
|
| PJQ5478 |
100V N-Channel Enhancement Mode MOSFET
|
Pan Jit International I...
|
| PJL9458AL |
100V N-Channel Enhancement Mode MOSFET
|
Pan Jit International I...
|
| PJL9454A |
100V N-Channel Enhancement Mode MOSFET
|
Pan Jit International I...
|
| DMP10H4D2S DMP10H4D2S-13 DMP10H4D2S-7 |
100V P-CHANNEL ENHANCEMENT MODE MOSFET
|
Diodes Incorporated
|
| PJD14P10A |
100V P-Channel Enhancement Mode MOSFET
|
Pan Jit International I...
|
| IRF5Y1310CM |
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
THRU-HOLE (TO-257AA) 100V, N-CHANNEL
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.044ohm, Id=18A*)
|
IRF[International Rectifier]
|
| IRF5Y9540CM |
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package
THRU-HOLE (TO-257AA) 100V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
|
International Rectifier
|
