| PART |
Description |
Maker |
| FS10UM-14A |
Bench Power Supply; No. of Outputs:1; Output Voltage:60V; Output Current:2A; Output Power Max:210W; Calibrated:No; Display Technology:LED RoHS Compliant: NA 10 A, 700 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex, Inc.
Powerex Power Semiconductors
Mitsubishi Electric Corporation
|
| PFS729EG PFS725EG PFS716EG PFS706EG PFS712EG PFS71 |
High Power PFC Controller with Integrated High-Voltage MOSFET
|
Power Integrations, Inc.
|
| IXKF40N60SCD1 |
CONN 60POS .1X.1 IDC RIBBON PCB 38 A, 600 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PAC
|
Vicor, Corp.
IXYS[IXYS Corporation]
|
| APT15GP90B |
MOSFET
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. 功率MOS 7 IGBT的是一个高压电源IGBT的新一代
|
Advanced Power Technology, Ltd.
|
| FS16SM-5 |
Power MOSFETs: FS Series, Medium Voltage, 250V
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Powerex Power Semiconductors
|
| FS4UM-12 FS1KM-16A FS20UM-6 |
Power MOSFETs: FS Series, Medium Voltage, 600V
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| GFCF50 |
N Channel high voltage, Power MOSFET
|
Gunter Seniconductor GmbH.
|
| FS100UM-03 |
100 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
Bench Power Supply; Output Voltage:30V; Output Current:3A; Number of Outputs:3; Calibrated:Yes; Certificate of Calibration:Yes; Output Current 2:.5A; Output Current 3:.5A; Output Voltage 2:12V; Output Voltage 3:5V
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IXTK20N150 IXTX20N150 |
High Voltage Power MOSFET Extended FBSOA
|
IXYS Corporation
|
| APT10045LLL APT10045B2LL APT10045B2LL_03 APT10045B |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 23; RDS(on) (Ohms): 0.45; BVDSS (V): 1000;
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
MICROSEMI POWER PRODUCTS GROUP
|
| APT8030JVFR_05 APT8030JVFR APT8030JVFR05 |
25 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
