| PART |
Description |
Maker |
| MGP20N40CL |
CAP 0.1UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
SMARTDISCRETES Internally Clamped / N-Channel IGBT
SMARTDISCRETES Internally Clamped, N-Channel IGBT
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| AXS-7550-06-05 |
Clam shell design for easy open and close
|
Abracon Corporation
|
| MGP20N14CL_D ON1860 MGP20N14CL |
SMARTDISCRETES Internally Clamped, N-Channel IGBT
From old datasheet system
20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT V ce(on) = 1.9 VOLTS 135 VOLTS (CLAMPED)
|
ONSEMI[ON Semiconductor]
|
| MLP2N06CL-D |
SMARTDISCRETES MOSFET 2 Amps, 62 Volts, Logic Level N-Channel TO-220
|
ON Semiconductor
|
| BTA16-600SW3G BTA16-600SW3 |
Triac, 3 Quadrant Internally Isolated, 10 mA I-GT, 16 A I-T(RMS)
600V 16 A, 10mA Igt 3 Quadrant Internally Isolated Triac
|
On Semiconductor
|
| MGFC45V5964A C455964A1 |
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| AGB3311 AGB3311S24Q1 AGB3311_REV_1.0 |
50 High Linearity Low Noise Internally Biased Wideband Gain Block
50?/a> High Linearity Low Noise Internally Biased Wideband Gain Block
50蟹 High Linearity Low Noise Internally Biased Wideband Gain Block
50з High Linearity Low Noise Internally Biased Wideband Gain Block
From old datasheet system
|
ANADIGICS[ANADIGICS, Inc]
|
| STGD5NB120SZT4 STGD5NB120SZ STGD5NB120SZ-1 |
N-CHANNEL 5A -1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT
40 个字x 1 线5 x 7 点阵字符和光
N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT N沟道5A 1200伏的DPAK /像是iPak内部钳位PowerMESHIGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
| MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应
From old datasheet system
2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFK35V4045 K354045 |
14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET
From old datasheet system
14.0~14.5GHZ BAND 3W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V5964 |
5.9-6.4 GHz Band 16W Internally Matched GaAs FET
5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
