| PART |
Description |
Maker |
| MJD44H11 MJD44H11-001 MJD45H11-001 MJD45H11T4G MJD |
SILICON POWER TRANSISTORS 8 A, 80 V, NPN, Si, POWER TRANSISTOR
Power 10A 80V PLA NPN
Power 10A 80V PLA PNP
|
ONSEMI[ON Semiconductor]
|
| PEB22554-HT |
POT 10K OHM 9MM HORZ PLA BUSHING
|
SIEMENS AG
|
| AM27S21APC |
1KBIT(256X4)PROM 30NS 16BR PLA 256 X 4 OTPROM, 30 ns, PDIP16
|
Advanced Micro Devices, Inc.
|
| AM29C833ASC |
600 MIL PLA SO GULL-WG CMOS SERIES, 8-BIT TRANSCEIVER, TRUE OUTPUT, PDSO24
|
Advanced Micro Devices, Inc.
|
| 0472660011 |
0.50mm (.020") Pitch HDMI* Receptacle, Right Angle, Black, Through Hole Shell Tab Length 1.90mm (.075"), 0.76渭m (30渭") Gold (Au) Selective Plating, Matt Tin Pla
|
Molex Electronics Ltd.
|
| 15-80-0129 0015800129 A-70567-0276 |
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 12 Circuits, 0.38μm (15μ) Gold, (Au) Selective Plating
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 12 Circuits, 0.38渭m (15渭) Gold, (Au) Selective Pla
Molex Electronics Ltd.
|
Molex Electronics Ltd.
|
| 0015800209 15-80-0209 A-70567-0280 |
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 20 Circuits, 0.38渭m (15渭) Gold, (Au) Selective Pla
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 20 Circuits, 0.38μm (15μ) Gold, (Au) Selective Plating
|
Molex Electronics Ltd.
|
| 0015800149 15-80-0149 A-70567-0277 |
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 14 Circuits, 0.38渭m (15渭) Gold, (Au) Selective Pla
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 14 Circuits, 0.38μm (15μ) Gold, (Au) Selective Plating
|
Molex Electronics Ltd.
|
| A-70567-0349 15-80-1221 0015801221 |
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 22 Circuits, 0.76渭m (30渭) Gold, (Au) Selective Pla
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 22 Circuits, 0.76μm (30μ) Gold, (Au) Selective Plating
|
Molex Electronics Ltd.
|
| A-70567-0344 15-80-1121 0015801121 |
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 10 Circuits, 0.76渭m (30渭) Gold, (Au) Selective Pla
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 10 Circuits, 0.76μm (30μ) Gold, (Au) Selective Plating
|
Molex Electronics Ltd.
|
| A-70567-0343 15-80-1101 0015801101 |
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 10 Circuits, 0.76渭m (30渭) Gold, (Au) Selective Pla
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 10 Circuits, 0.76μm (30μ) Gold, (Au) Selective Plating
|
Molex Electronics Ltd.
|
|
