| PART |
Description |
Maker |
| BFY182 |
From old datasheet system
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
|
Siemens Semiconductor Group
|
| BFY183 |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies A...
|
| BFY183H BFY183 BFY183ES BFY183P BFY183S |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BFY450P BFY450 BFY450ES BFY450H BFY450S |
HiRel NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| BFY196P BFY196S BFY196 BFY196H |
HiRel NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| BAT14 BAT14-013 BAT14-033 BAT14-043 BAT14-063 BAT1 |
From old datasheet system
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管（伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器）
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| CC5401 |
PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTO
|
Continental Device India Limited
|
| BAS40 BAS40-T1 |
HiRel Silicon Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
| MFE960 MFE990 |
N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTO
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| 6507A MX6507A |
0.3 A, 8 ELEMENT, SILICON, SIGNAL DIODE
Isolated Diode Array with HiRel MQ, MX, MV, and SP Screening Options
|
MICROSEMI CORP-SCOTTSDALE
MICROSEMI[Microsemi Corporation]
|
