| PART |
Description |
Maker |
| FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
L-Band Medium & High Power GaAs FET
|
FUJITSU LTD
EUDYNA[Eudyna Devices Inc]
|
| FLL800IQ-2C |
L-Band High Power GaAs FET
|
etc
List of Unclassifed Manufacturers
|
| FLL410IK-4C |
L-Band High Power GaAs FET
|
Fujitsu Microelectronics
Eudyna Devices Inc
Fujitsu Media Devices Limited
Fujitsu Component Limited.
|
| FLL21E135IX |
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL21E045IY |
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体
CAP 15UF 16V 10% TANT SMD-6032-28 TR-7
CAP TANTALUM 1.5UF 35V 10% SMD
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor
VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes
|
NEC, Corp.
NEC Corp.
NEC[NEC]
http://
|
| FLL107ME |
L-BAND MEDIUM & HIGH POWER GAAS FET
|
Fujitsu Microelectronics
|
| FLL400IP-2 |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
| FLU17XM |
L-Band Medium & High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| FLL200IB-1 FLL200IB-3 |
(FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
|
Eudyna Devices
|
| NES2527B-30 |
30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
|
