| PART |
Description |
Maker |
| HN3G01J HN3G01 E002017 |
N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR
From old datasheet system
|
http://
Toshiba Semiconductor
|
| 2SK3857TV |
Silicon N Channel Junction Type For ECM
|
Toshiba Semiconductor
|
| 2SK3857TK |
Silicon N Channel Junction Type For ECM
|
Toshiba Semiconductor
|
| 2SK3582TK |
Field Effect Transistor Silicon N Channel Junction Type For ECM
|
Toshiba Semiconductor
|
| 2SK211 |
N CHANNEL JUNCTION TYPE (FM TUNER, VHF BAND AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SK214507 |
N CHANNEL JUNCTION TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SK18407 2SK184 |
Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK37107 2SK371 |
Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK11707 2SK117 |
Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK170 K170 |
FET/ Silicon N Channel Junction Type(for Low Noise Audio Amplifier)
FET, Silicon N Channel Junction Type(for Low Noise Audio Amplifier)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK20907 2SK209 |
Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK88007 2SK880 |
Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications
|
Toshiba Semiconductor
|
