| PART |
Description |
Maker |
| NESG2101M16-A NESG2101M16-T3 NESG2101M16-T3-A NESG |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
| THN6601B |
NPN SiGe RF TRANSISTOR
|
TACHYONICS[Tachyonics CO,. LTD]
|
| BFU540 |
NPN SiGe wideband transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| THN6701B |
NPN SiGe RF POWER TRANSISTOR
|
Tachyonics CO,. LTD
|
| BFU510 |
NPN SiGe wideband transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| NESG2031M05-T1-A NESG2031M05 NESG2031M05-T1 |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
| NESG2031M05-T1-A |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
California Eastern Laboratories
|
| BFP620FE6327 |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
|
INFINEON TECHNOLOGIES AG
|
| NESG2021M05 NESG2021M05-T1-A |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
| NESG2021M05-T1-A |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR 邻舍npn型硅锗高频晶体管
|
Duracell
California Eastern Laboratories, Inc.
|
