| PART |
Description |
Maker |
| BTA16-600BW BTA16-400CW BTB16-400CW |
Transient Voltage Suppressor Diodes
TRIAC|400V V(DRM)|16A I(T)RMS|TO-220
Snubberless Triacs
|
ST Microelectronics
|
| IRF360 IRF360-15 |
Repetitive Avalanche Ratings
TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=0.20ohm/ Id=25A)
TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A)
400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
|
IRF[International Rectifier]
|
| STB16NF06L STB16NF06L06 |
N-channel 60V - 0.07Ω - 16A - D2PAK STripFET Power MOSFET
N-channel 60V - 0.07楼? - 16A - D2PAK STripFET垄芒 Power MOSFET
N-channel 60V - 0.07ヘ - 16A - D2PAK STripFET⑩ Power MOSFET
|
STMicroelectronics
|
| STK10C68-L45M STK10C68-L55M |
NVRAM (EEPROM Based)
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:80mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:80mA NVRAM中（EEPROM的基础
|
Electronic Theatre Controls, Inc.
|
| A16F100 A16F40 16F40 |
1200V 16A Std. Recovery Diode in a DO-203AA (DO-4)package
400V 16A Std. Recovery Diode in a DO-203AA (DO-4)package
|
International Rectifier
|
| HGTD6N40E1 HGTD6N50E1S HGTD6N40E1S HGTD6N50E1 |
6A/ 400V and 500V N-Channel IGBTs
6A 400V and 500V N-Channel IGBTs
6A, 400V and 500V N-Channel IGBTs 7.5 A, 500 V, N-CHANNEL IGBT, TO-252AA
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FQA17N40 |
400V N-Channel QFET
400V N-CHANNEL MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQB2P40 FQI2P40 FQB2P40TM |
400V P-Channel QFET
400V P-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQD6N40 FQU6N40 FQD6N40TF FQD6N40TM |
400V N-Channel QFET
400V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQU2N40 FQD2N40 FQD2N40TF FQD2N40TM |
400V N-Channel QFET
400V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
