| PART |
Description |
Maker |
| NTD32N06-1 NTD32N06-1G NTD32N06T4G NTD32N06 NTD32N |
Power MOSFET 32 Amps, 60 Volts
32 Amps, 60 Volts, N−Channel DPAK
|
ONSEMI[ON Semiconductor]
|
| SSR1008M SSR1008Z SSR1009M SSR1009Z SSR1010M SSR10 |
10 AMPS 80 - 100 VOLTS SCHOTTKY RECTIFIER
|
Solid States Devices, Inc
|
| SSR2010JUB SSR2010CAJ SSR2010CAJDB SSR2010CAJUB SS |
20 AMPS 100 VOLTS SCHOTTKY RECTIFER
|
SSDI[Solid States Devices, Inc]
|
| NTB90N02 NTB90N02T4 NTP90N02 |
Power MOSFET 90 Amps / 24 Volts
TV 18C 14#22D 4#8(TWINAX) PIN 90 A, 24 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 90 Amps, 24 Volts
Power MOSFET 90 Amps 24 Volts
|
ONSEMI[ON Semiconductor]
|
| 7N10G-TN3-R 7N10L-AA3-R 7N10L-TN3-R 7N10G-AA3-R |
7 Amps, 100 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| SSR2010CTZ SSR2008CTM SSR2008CTZ SSR2009CTM SSR200 |
20 AMPS 100 VOLTS CENTER TAP SCHOTTKY RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SDR622CTJ SDR621CTJ SDR620CTJ |
40 AMPS 100 - 200 VOLTS 35 nsec HYPER FAST CENTERTAP RECTIFIER
|
Solid States Devices, Inc.
|
| NTB45N06 NTB45N06T4 NTP45N06 NTP45N06_D NTP45N06D |
Power MOSFET 45 Amps, 60 Volts N?Channel TO?20 and D2PAK
Power MOSFET 45 Amps / 60 Volts
Power MOSFET 45 Amps, 60 Volts N-Channel TO-220 and D2PAK
Power MOSFET 45 Amps, 60 Volts 功率MOSFET四十五安培，60伏特
|
ONSEMI[ON Semiconductor]
|
| CSHD6-100C |
SCHOTTKY RECTIFIER DUAL,COMMON CATHODE 6.0 AMPS, 100 VOLTS HIGH VOLTAGE
|
CENTRAL[Central Semiconductor Corp]
|
