| PART |
Description |
Maker |
| NE25139U74 NE25139U73 NE25139U72 NE25139U71 NE2513 |
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,30MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,20MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,10MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,5MA I(DSS),SOT-143
From old datasheet system
|
NEC Electron Devices
|
| BFG67/XT/R |
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | SOT-143 晶体管|晶体管|叩| 10V的五（巴西）总裁| 50mA的一（c）|的SOT - 143
|
NXP Semiconductors N.V.
|
| DD20R |
TRANSISTOR, DMOS FET, N-CH, ENHANCEMENT MODE, SOT-143
Damper Diode for Very High-Definition Display Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| ESDU5V0G3 |
SOT-143 Plastic-Encapsulate Diodes
|
TY Semiconductor Co., L...
|
| ADM6315 |
Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143
|
Analog Devices, Inc.
AD[Analog Devices]
|
| P4C1258-25CMB P4C1258L-25CMB P4C1258-45LMB P4C1258 |
VOLTAGE DETECTOR W/OPEN DRAIN ACTIVE LOW OUTPUT & Oms TIMEOUT, -40C to 125C, 5-SOT-23, T/R
Micro Power Voltage detector, w/push pull active low, -40C to 125C, 5-SOT-23, T/R
VOLTAGE DETECTOR W/PUSH PULL ACTIVE LOW OUTPUT & Oms TIMEOUT, -40C to 125C, 5-SOT-23, T/R
VOLTAGE DETECTOR W/PUSH-PULL ACTIVE LOW OUTPUT & 0ms TIMEOUT, -40C to 125C, 4-SOT-143, T/R
VOLTAGE DETECTOR W/OPEN DRAIN ACTIVE LOW OUTPUT & 2ms TIMEOUT, -40C to 125C, 5-SOT-23, T/R
MICRO POWER VOLTAGE DETECTOR, W/OPEN DRAIN, ACTIVE LOW, -40C to 125C, 5-SOT-23, T/R
VOLTAGE DETECTOR W/OPEN DRAIN ACTIVE LOW OUTPUT & 0ms TIMEOUT, -40C to 125C, 4-SOT-143, T/R
VOLTAGE DETECTOR W/PUSH-PULL ACTIVE LOW OUTPUT & 2ms TIMEOUT, -40C to 125C, 4-SOT-143, T/R
MICTO POWER VOLTAGE DETECTOR, W/ACTIVE DRAIN, ACTIVE LOW, -40C to 125C, 5-SOT-23, T/R
VOLTAGE DETECTOR W/OPEN DRAIN ACTIVE LOW OUTPUT & 2ms TIMEOUT, -40C to 125C, 4-SOT-143, T/R
VOLTAGE DETECTOR W/PUSH PULL ACTIVE LOW OUTPUT & 2ms TIMEOUT, -40C to 125C, 5-SOT-23, T/R
VOLTAGE DETECTOR W/PUSH-PULL ACTIVE HIGH OUTPUT & 0ms TIMEOUT, -40C to 125C, 4-SOT-143, T/R x4的SRAM
MICRO POWER VOLTAGE DETECTOR, W/OPEN DRAIN ACTIVE LOW, -40C to 125C, 4-SOT-143, T/R x4的SRAM
VOLTAGE DETECTOR W/OPEN DRAIN ACTIVE LOW OUTPUT & 2ms TIMEOUT, -40C to 125C, 5-SOT-23, T/R x4的SRAM
x4 SRAM x4的SRAM
|
Unisonic Technologies Co., Ltd.
Pyramid Semiconductor, Corp.
|
| NDT014 NDT014J23Z |
N-Channel Enhancement Mode Field Effect Transistor.7A0V.2ΩN沟道增强型场效应管（漏电.7A, 漏源电压60V，导通电.2Ω 2.7 A, 60 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.7A I(D) | SOT-223
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
|
| BUK9107-55ATE |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | SOT-426 晶体| MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | SOT-426封装
TrenchPLUS logic level FET
|
NXP Semiconductors N.V.
Philips
|
| ST95040 ST95040B1TR ST95040B3TR ST95040B6TR ST9504 |
4K serial SPI EEPROM with positive clock strobe
4/2/1 KBITS SERIAL SPI EEPROM WITH POSITIVE CLOCK STROBE
(ST950x0) 4K/2K/1K Serial SPI EEPROM with Positive Clock Strobe
MOSFET, N SOT-23MOSFET, N SOT-23; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:SOT-23; Current, Id cont:2.6A; Current, Idm pulse:10A; Power, Pd:0.75W; Resistance, Rds on:0.07R; SMD:1; Current, Id
4K/2K/1K Serial SPI EEPROM with Positive Clock Strobe 4K/2K/1K串行SPI EEPROM，带有正时钟选
SPI Serial EEPROM SPI串行EEPROM
2K serial SPI EEPROM with positive clock strobe
|
ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| NDT451AN NDT451 NDT451ANJ23Z |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7.2A I(D) | SOT-223
N-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五（巴西）总裁|甲一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1A条一（c）|采用SOT - 89
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五（巴西）总裁| 400mA的一（c）|
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC
Fujitsu, Ltd.
Bourns, Inc.
Amphenol, Corp.
|
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