| PART |
Description |
Maker |
| FM21LD16 FM21LD16-60-BG FM21LD16-60-BGTR |
2Mbit F-RAM Memory
|
Ramtron International Corporation
|
| AT61162ENBSP AT61162E |
Radiation Hard 2Mbit x 8 SRAM Cube
From old datasheet system
|
Atmel Corp
|
| LH28F016SUHT LH28F016SUHT-10 |
16Mbit(1Mbit x 16, 2Mbit x 8) 5V Single Voltage Flash Memory
16Mbit(1Mbit x 16/ 2Mbit x 8) 5V Single Voltage Flash Memory
|
SHARP[Sharp Electrionic Components]
|
| AT61162E |
Radiation Hard 2Mbit x 8 SRAM Cube. Made of 16 stacked 128K x 8 SRAMs.
|
Atmel
|
| M28W231 |
2Mbit (256Kb x8, Boot Block) Low Voltage Flash Memory(2Mb低压闪速存储器)
|
意法半导
|
| LH28F016SUHT-10 |
16Mbit(1Mbit x 16, 2Mbit x 8) 5V Single Voltage Flash Memory 16兆（容量Mbit × 16Mbit的8V单电压闪
|
Sharp, Corp.
|
| V54C365804VC |
HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 8M X 8 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 8
|
MOSEL[Mosel Vitelic, Corp]
|
| AM29LV002BT-70EF AM29LV002BB-120ED |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes 256K X 8 FLASH 3V PROM, 70 ns, PDSO40
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
|
Spansion, Inc.
SPANSION LLC
|
| LH28F320S5H-L |
32M-BIT ( 2Mbit x16 / 4Mbit x8 )Boot Block Flash MEMORY(32M 2Mx16 / 4Mx8 )Boot Block 闪速存储器)
|
Sharp Corporation
|
| HYB39S128160CT HYB39S128800CT |
128-Mbit(4banks × 2MBit × 16) Synchronous DRAM(128M(4× 2M× 16)同步动态RAM)
128-Mbit(4banks × 4MBit × 8) Synchronous DRAM(128M(4× 4M× 8)同步动态RAM) 128兆位banks ×Mb × 8）同步DRAM28M的（4 × 4分列位8）同步动态RAM）的
|
SIEMENS AG
|
