| PART |
Description |
Maker |
| BS108 |
DMOS Transistors (N-Channel)
|
General Semiconductor
|
| BS109 |
DMOS Transistors (N-Channel)(N通道DMOS晶体 DMOS晶体管（N沟道）（不适用通道的DMOS晶体管）
|
GE Security, Inc.
GE[General Semiconductor]
|
| STP9434 |
STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| FQU6N50C FQD6N50C FQD6N50CTF FQD6N50CTM |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology
500V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IMZ4 A5800398 |
Transistors > Complex Bipolar Transistors
General purpose transistor (dual transistors)
From old datasheet system
|
Rohm CO.,LTD.
|
| VN0300L VN0300 VN0300B VN0300D |
N-Channel Enhancement-Mode Vertical DMOS FETs
N-Channel Enhancement-Mode Vertical DMOS Power FETs
|
Supertex Inc
|
| ST3401SRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
| STN8205D STN8205DST6RG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
| CPC3701CTR |
Vertical DMOS FET
|
Clare, Inc.
|
| ST2302MSRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
| ST2303SRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
