| PART |
Description |
Maker |
| UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
|
NEC[NEC]
|
| UPA1952 UPA1952TE UPA1952TE-T2 UPA1952TE-T1 |
Pch enhancement-type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| UPA1912TE-T2 |
Pch enhancement type MOS FET
|
NEC
|
| UPA1915TE-T2 |
Pch enhancement type MOS FET
|
NEC
|
| SP8J5 |
4V Drive Pch Pch MOS FET
|
Rohm
|
| 2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC Corp.
NEC[NEC]
|
| RTE002P02 |
2.5V DRIVE PCH MOS FET
|
Rohm
|
| QS5U28 QS5U28-06 |
2.5V Drive Pch SBD MOS FET
|
Rohm
|
| QS6U22 QS6U221 |
2.5V Drive Pch SBD MOS FET
|
Rohm
|
| US5U291 US5U29 |
2.5V Drive Pch SBD MOS FET
|
ROHM[Rohm]
|
| 2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET
MOS Field Effect Transistor
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| 2SJ624 2SJ624-T1B 2SJ624-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
