| PART |
Description |
Maker |
| MB84VP23481FK-70 MB84VP23481FK-70PBS |
64M (X16) Page FLASH MEMORY & 32M (X16) Mobile FCRAMTM
|
Spansion Inc.
|
| MB84VD23280EA MB84VD23280EA-90 MB84VD23280EA-90-PB |
64M (x8/x16) FLASH MEMORY & 8M (x8/x16) STATIC RAM 64M号（x8/x16）闪
64M (x8/x16) FLASH MEMORY & 8M (x8/x16) STATIC RAM
|
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| MX26L6419TC-10 MX26L6419 |
64M [x16] SINGLE 3V PAGE MODE MTP MEMORY
|
MCNIX[Macronix International]
|
| MX26F640J3XCC-10 MX26F640J3 MX26F640J3TC-10 |
64M [x8/x16] SINGLE 3V PAGE MODE eLiteFlashTM MEMORY
|
MCNIX[Macronix International]
|
| LRS1B12 |
64M ( X16) Flash & 64M ( X16) Flash & 32M ( X16) SCRAM & 8M (x16) SRAM
|
Sharp Microelectronics
|
| K8D6316UTM-PC07 K8D6316UTM-PC08 K8D6316UTM-PC09 K8 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
|
SAMSUNG[Samsung semiconductor]
|
| K8D6316UBM-LC09 K8D638UBM-FC09 K8D6316UBM-LC08 K8D |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
|
http://
|
| MB84VD22281EA-90-PBS MB84VD22282EA-90-PBS MB84VD22 |
Stacked MCP (multi-chip package) flash memory & SRAM 32M(x8/x16) flash memory & 8M(x8/x16) static RAM
32M (x 8/x16) FLASH MEMORY & 8M (x 8/x16) STATIC RAM
|
Fujitsu Microelectronics
|
| MB84VD22081EA-90-PBS MB84VD22082EA-90-PBS MB84VD22 |
32M (X 8/X16) FLASH MEMORY & 2M (X 8/X16) STATIC RAM
Stacked MCP (multi-chip package) flash memory & SRAM 32M(x8/x16) flash memory & 2M(x8/x16) static RAM
|
Fujitsu Microelectronics
|
| AT49SN6416T AT49SN3208T AT49SN6416T-90CJ |
AT49SN6416(T)/3208(T) Advance Information [Updated 3/02. 38 Pages] 64M bit and 32M. 1.8-Volt Burst and Page Mode Flash Memory
4M X 16 FLASH 1.8V PROM, 90 ns, CBGA55
|
ATMEL CORP
|
| NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位1千兆位（x8/x1628 Byte/264字的页面1.8V/3V，NAND闪存芯片
128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
64M X 8 FLASH 3V PROM, 35 ns, PBGA55
64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
8M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
NUMONYX
http://
|
