| PART |
Description |
Maker |
| GLT4160M04-60J3 GLT4160M04-60TC |
60ns; 4K x 4 CMOS dynamic RAM with extended data output
|
G-LINK Technology
|
| KM44C4103C KM44C4003C KM44C4003CK-6 KM44C4003CKL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| LT1671 1671I |
60ns, Low Power,Single Supply, Ground-Sensing Comparator
From old datasheet system
|
Linear
|
| IRF5Y9540CM |
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package
THRU-HOLE (TO-257AA) 100V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
|
International Rectifier
|
| 10ERA60 |
FRD
|
http://
NIEC[Nihon Inter Electronics Corporation]
|
| 31DF4 |
FRD
|
Nihon Inter Electronics Corporation
ETC
|
| IRHG7110 |
100V, 4 N-Channel Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率四N沟道MOSFET)
|
International Rectifier
|
| 1N4148-G |
Small Signal Switching Diodes, V-RRM=100V, V-R=100V, P-D=0mW, I-F=150mA
|
Comchip Technology
|
| CDBW1100R-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=100V, V-R=100V, I-O=1A
|
Comchip Technology
|
| FDS3672 FDS3672NL |
N-Channel PowerTrench MOSFET 100V/ 7.5A/ 22m
N-Channel PowerTrench MOSFET 100V, 7.5A, 22mз
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 7.5A, 0.022 Ohm @ Vgs = 10V, SO-8 Package
|
FAIRCHILD[Fairchild Semiconductor]
|
| F10920FR |
FRD 方程式赛车发展有限公
|
Electronic Theatre Controls, Inc.
ETC
Nihon
|
