| PART |
Description |
Maker |
| 1617AM10 |
10 W, 18 V, 1500-1800 MHz common emitter transistor
|
GHz Technology
|
| 1617AB35 |
35 W, 25 V, 1600-1700 MHz common emitter transistor
|
GHz Technology
|
| MDC03 |
Common Emitter Transistor Array - 3 each PNP and NPN
|
ROHM
|
| 1819AB25 |
25 W, 25 V, 1808-1880 MHz common emitter transistor
|
GHz Technology
|
| AT-31625 AT-31625-BLK AT-31625-TR1 |
4.8 V NPN Common Emitter Medium Power Output Transistor
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| AT-36408-TR1 AT-36408 AT-36408-BLK |
4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| UTV005 |
COMMON EMITTER transistor 0.5 Watt, 20 Volts, Class A UHF Television - Band IV & V
|
GHZTECH[GHz Technology]
|
| EMA6DXV5T5 |
(EMA6DXV5T1 / EMA6DXV5T5) Dual Common Emitter Bias Resistor Transistor PNP Silicon Surface Mount Transistors
|
ON Semiconductor
|
| MS1227 |
HF 2-50 MHz, Class C, Common Emitter; P(out) (W): 20; P(in) (W): 0.65; Gain (dB): 15; Vcc (V): 12.5; Cob (pF): 100; fO (MHz): 0; Case Style: M113 HF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
|
Microsemi, Corp.
ADPOW
|
| UMY1N FMY1A EMY1 EMT5 |
Emitter common (dual transistors)
|
Rohm CO.,LTD.
ROHM[Rohm]
|
