| PART |
Description |
Maker |
| UPC842C UPC842G2 UPC842 UPC842G2MS UPC842G2-E1 UPC |
DUAL OP-AMP, 4500 uV OFFSET-MAX, 3.5 MHz BAND WIDTH, PDSO8
BIPOLAR ANALOG INTEGRATED CIRCUIT (SINGLE SUPPLY VOLTAGE, HIGH SPEED, WIDE BAND, DUAL OPERATIONAL AMPLIFIERS)
|
NEC[NEC]
|
| LTC1757A-1-1 LTC1757A-2-15 LTC1757A-1-15 |
Single/Dual Band RF Power Controllers
|
Linear Technology
|
| LTC1957-2 |
(LTC1957-1/-2) Single/Dual Band RF Power Controllers
|
Linear Technology
|
| AWT6108 AWT6108M10P8 |
This quad band power amplifier module is designed to support dual, tri and quad band applications.
Power Amplifiers
Quad Band Power Amplifier Module 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
Anadigics Inc
ANADIGICS, Inc.
|
| MAX4129ESD-T |
Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op Amps QUAD OP-AMP, 4000 uV OFFSET-MAX, 5 MHz BAND WIDTH, PDSO14
|
Maxim Integrated Products, Inc.
|
| IRFN140SMD |
ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）3.9A，的Rds（on）：0.077Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本100V的，身份证（续）3.9A时，RDS（对）：0.077Ω））
|
TT electronics Semelab, Ltd.
International Rectifier, Corp.
Seme LAB
|
| NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
| IRFM250 |
N-Channel Power MOSFET(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）7.4A，的Rds（on）：0.100Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）7.4A时，RDS（对）：0.100Ω））
|
Electronic Theatre Controls, Inc.
SEME-LAB
Seme LAB
|
| NJM2119 NJM2119D NJM2119M NJM2119M-TE2 |
DUAL OP-AMP, 450 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO8
DUAL SINGLE-SUPPLY OPERATIONAL AMPLIFIER
|
New Japan Radio Co., Ltd.
NJRC[New Japan Radio]
|
| IRFN340SMD |
N-Channel Power MOSFET(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω)(N沟道功率MOS场效应管(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| QCPM-9801 |
824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
PCS / CDMA / AMPS Dual-Band Tri-Mode Power Amplifier Module
|
AGILENT TECHNOLOGIES INC
|
