| PART |
Description |
Maker |
| IS61C256 |
WRITE CYCLE SWITCHING CHARACTERISTICS
|
Integrated Silicon Solution, Inc
|
| MG64F237 |
Flash write/erase cycle
|
Megawin Technology Co.,...
|
| IR1150ISTRPBF IR1150IPBF IR1150PBF IR1150STR |
1.5 A POWER FACTOR CONTROLLER, 200 kHz SWITCHING FREQ-MAX, PDSO8
UPFC ONE CYCLE CONTROL PFC IC
UPFC ONE CYCLE CONTROL PFC IC
|
International Rectifier
|
| MAX1837ETT50-T MAX1837EUT33TG16 MAX1836EUT50 |
0.9 A SWITCHING REGULATOR, PDSO6
24V Internal Switch, 100% Duty Cycle, Step-Down Converters
0.45 A SWITCHING REGULATOR, PDSO6
|
MAXIM INTEGRATED PRODUCTS INC
|
| AN1078 |
ST7 PWM DUTY CYCLE SWITCH IMPLEMENTING TRUE 0% & 100% DUTY CYCLE
|
SGS Thomson Microelectronics
|
| 24C08 ST25C08 ST25C08B1TR ST25C08B3TR ST25C08B5TR |
IC ACEX 1K FPGA 100K 484-FBGA
Pulse Width Modulation (PWM) Controller IC; Topology:Flyback, Forward; Control Mode:Current; Number of PWM Outputs:1; Input Voltage Primary Min:15V; Input Voltage Primary Max:200V; Duty Cycle Max:50%
MOSFET, N POWERPAKMOSFET, N POWERPAK; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:150V; Case style:PowerPak SO-8; Current, Id
(ST2xxx) 8 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
8 Kbit Serial I 2 C Bus EEPROM with User-Defined Block Write Protection
8KbitSerialI2CBusEEPROMwithUser-DefinedBlockWriteProtection
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| AT49LV2048A AT49BV2048A AT49LV2048A-70TC AT49LV204 |
2M bit, 3.0-Volt Read and 3.0-Volt Write, Byte-Write Flash, Bottom Boot
2M bit, 2.7-Volt Read and 2.7-Volt Write, Byte-Write Flash, Bottom Boot
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage Flash Memory
|
Atmel
|
| SSI32R2020R-4CL SSI32R2020R-4CV SSI32R2020R-6CV SS |
6-Channel Read/Write Circuit
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
10-Channel Disk Read/Write Circuit 10通道磁盘写电
2-Channel Disk Read/Write Circuit 2通道磁盘写电
|
DB Lectro, Inc.
Lattice Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
|
| SSI32R511-8F SSI32R516-6CH SSI32R516-6CL SSI32R516 |
4-Channel Disk/Tape Read/Write Circuit
8-Channel Disk Read/Write Circuit 8通道磁盘写电
6-Channel Read/Write Circuit 6通道写电
|
API Delevan
|
| 24LCS52 24LC52-IP 24LC52-ISN 24LC52-IST 24LC52-P 2 |
2K 2.5V I 2 C Serial EEPROM with Software Write Protect 2K 2.5VI 2 C串行EEPROM，带有软件写保护
2K 2.5V I 2 C Serial EEPROM with Software Write Protect
2K2.5VI2CSerialEEPROMwithSoftwareWriteProtect
|
MicrochipTechnology
Microchip Technology, Inc.
Microchip Technology Inc.
MICROCHIP[Microchip Technology]
|
| BH6628AFS |
Magnetic Disk LSIs > FDD read/write amplifier
Read / Write amplifier for FDD
|
ROHM[Rohm]
|
| IDT71V2577YS75BQI IDT71V2577YS75BGI IDT71V2579S85B |
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 8 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K的x 36256亩18 3.3同步SRAM.5VI / O的流量通过输出脉冲计数器，单周期取
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 8.5 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PBGA119
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 256K X 18 CACHE SRAM, 7.5 ns, PBGA119
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 256K X 18 CACHE SRAM, 8 ns, PBGA165
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
