| PART |
Description |
Maker |
| 2SK3708 |
High Output MOSFETs
General-Purpose Switching Device Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SK3821 |
High Output MOSFETs
General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| 2SK3707 |
High Output MOSFETs
General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| IXFH14N100Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr
|
IXYS[IXYS Corporation]
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| MCH3317 |
Medium Output MOSFETs
|
SANYO
|
| 2SK3416 |
Medium Output MOSFETs
|
SANYO
|
| CPH3321 |
Medium Output MOSFETs
|
SANYO
|
| EC4403C |
Medium Output MOSFETs
|
SANYO
|
| MCH3333 |
Medium Output MOSFETs
|
SANYO
|
| CPH6319 |
Medium Output MOSFETs
|
SANYO
|
