| PART |
Description |
Maker |
| 10DRA20 |
FRD - 1A 200V 60ns 1 A, 200 V, SILICON, SIGNAL DIODE
|
Nihon Inter Electronics, Corp.
NIEC[Nihon Inter Electronics Corporation]
|
| 232219314159 PR01-3R9 PR02-330K PR01-1R PR01-22K P |
WIDERSTAND LEISTUNG METALL 15R 200V 1W
WIDERSTAND LEISTUNG METALL 3R9 200V 1W
WIDERSTAND LEISTUNG METALL 22K 200V 1W
WIDERSTAND LEISTUNG METALL 5R6 200V 1W
WIDERSTAND LEISTUNG METALL 4R7 200V 1W
WIDERSTAND LEISTUNG METALL 330R 200V 1W
WIDERSTAND LEISTUNG METALL 6R8 200V 1W
WIDERSTAND LEISTUNG METALL 22K 500V 2W
WIDERSTAND LEISTUNG METALL 470K 500V 2W
WIDERSTAND LEISTUNG METALL 220R 500V 2W
WIDERSTAND LEISTUNG METALL 1K5 500V 2W
WIDERSTAND LEISTUNG METALL 6R8 500V 2W
WIDERSTAND LEISTUNG METALL 100K 500V 2W
WIDERSTAND LEISTUNG METALL 18K 200V 1W
WIDERSTAND LEISTUNG METALL 100R 500V 2W
WIDERSTAND LEISTUNG METALL 220K 500V 2W
WIDERSTAND LEISTUNG METALL 3R3 500V 2W
WIDERSTAND LEISTUNG METALL 4R7 500V 2W
WIDERSTAND LEISTUNG METALL 5K6 200V 1W
WIDERSTAND LEISTUNG METALL 4K7 500V 2W
WIDERSTAND LEISTUNG METALL 3K3 500V 2W
WIDERSTAND LEISTUNG METALL 68R 200V 1W
WIDERSTAND LEISTUNG METALL 1M 500V 2W
WIDERSTAND LEISTUNG METALL 6K8 500V 2W
WIDERSTAND LEISTUNG METALL 1K 500V 2W WIDERSTAND给付000 500V 2W的金
WIDERSTAND LEISTUNG METALL 1R 200V 1W WIDERSTAND给付1W的金受体200
WIDERSTAND LEISTUNG METALL 150K 200V 1W WIDERSTAND给付1500W的金
WIDERSTAND LEISTUNG METALL 330K 500V 2W WIDERSTAND给付3300V 2W的金
WIDERSTAND LEISTUNG METALL 3K3 200V 1W WIDERSTAND给付1W的金3K3 200
WIDERSTAND LEISTUNG METALL 18R 200V 1W WIDERSTAND给付1W的金18受体200
WIDERSTAND LEISTUNG METALL 100R 200V 1W WIDERSTAND给付1W的金100R 200
WIDERSTAND LEISTUNG METALL 15K 500V 2W WIDERSTAND给付15000 500V 2W的金
WIDERSTAND LEISTUNG METALL 15R 500V 2W WIDERSTAND给付金属15R 500V 2W
WIDERSTAND LEISTUNG METALL 3K9 200V 1W WIDERSTAND给付1W的金K9 200
WIDERSTAND LEISTUNG METALL 470R 500V 2W WIDERSTAND给付金属470R 500V 2W
WIDERSTAND LEISTUNG METALL 15K 200V 1W
|
Vishay Intertechnology, Inc.
CommScope, Inc.
Applied Micro Circuits, Corp.
MicroEngineering Labs, Inc.
Welwyn Components, Ltd.
EAO International
STMicroelectronics N.V.
|
| GLT4160M04-60J3 GLT4160M04-60TC |
60ns; 4K x 4 CMOS dynamic RAM with extended data output
|
G-LINK Technology
|
| CDBB5200-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=200V, V-R=200V, I-O=5A
|
Comchip Technology
|
| LT1671 LT1671CMS8 LT1671CS8 LT1671IS8 |
60ns, Low Power,Single Supply, Ground-Sensing Comparator
60ns, Low Power, Single Supply, Ground-Sensing Comparator
60ns/ Low Power/ Single Supply/ Ground-Sensing Comparator
|
Linear Technology Corporation
LINER[Linear Technology]
|
| KM416V4100B KM416V4000B KM416V4000BS-6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| BYW51-200 |
8A, 100V - 200V Ultrafast Dual Diodes(8A, 100V - 200V 超快速二极管) 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
|
ON Semiconductor
|
| FQI10N20 FQB10N20 FQB10N20TM |
200V N-Channel QFET
200V N-Channel MOSFET
CAP 2200PF 100V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
|
http://
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| FQU630 FQD630 FQD630TM |
200V N-Channel QFET
200V N-Channel MOSFET(N沟道增强型MOS场效应管（漏电流7A, 漏源电压200V，导通电.4Ω
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
