| PART |
Description |
Maker |
| HYB3118165BST-50 HYB5118165BST-50 HYB3118165BSJ-60 |
High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16-Bit Dynamic RAM 1k Refresh 100万16位动态随机存储器经销商刷
1M×16-Bit Dynamic RAM(1M×16动态RAM(快速页面模)
1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16动RAM)
|
Siemens Semiconductor Group
SIEMENS AG
|
| HYB5117800BSJ-50- Q67100-Q1092 Q67100-Q1093 HYB311 |
2M x 8 - Bit Dynamic RAM 2k Refresh
2M×8-Bit Dynamic RAM (Fast Page Mode)(2M×8动态RAM(快速页面模)
|
SIEMENS AG
SIEMENS A G
|
| Q67100-Q527 Q67100-Q1056 Q67100-Q519 Q67100-Q518 Q |
1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM 1个M × 1位动态随机存储器的低功个M位动态随机存储器
1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM
1 M x 1-Bit Dynamic RAM Low Power 1 M ′ 1-Bit Dynamic RAM
|
SIEMENS AG
Siemens Semiconductor Group
|
| HYB5118165BSJ-70 HYB5118165BSJ-60 HYB5118165BSJ-50 |
-1M x 16-Bit Dynamic RAM 1k & 4k Refresh
1M x 16-Bit Dynamic RAM 1k & 4k Refresh (Hyper Page Mode- EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| Q67100-Q1135 Q67100-Q1136 Q67100-Q1143 Q67100-Q112 |
3.3V 4M x 4-Bit EDO-Dynamic RAM 3.3 4米4位江户动态随机存储器
High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85 4M X 4 EDO DRAM, 70 ns, PDSO24
3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 50 ns, PDSO24
3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
http://
SIEMENS A G
SIEMENS AG
|
| HYB5116405BJ-50 HYB5116405BJ-60 HYB5117405BJ-70 HY |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh 4M X 4 EDO DRAM, 70 ns, PDSO24
POWERLINE: RP12-S_DA - 2:1 Wide Input Voltage Range- 12 Watts Output Power- 1.6kVDC Isolation- Over Current Protection- Five-Sided Continuous Shield- Standard DIP24 and SMD-Pinning- Efficiency to 88%
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS A G
SIEMENS AG
http://
Siemens Semiconductor G...
|
| TC514400JL TC51440JL-10 TC51440JL-80 TC51440ZL-10 |
80 ns, 4-bit generation dynamic RAM
1,048,576 x 4 BIT DYNAMIC RAM 1,048,576 × 4位动态随机存储器
100 ns, 4-bit generation dynamic RAM
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| Q67100-Q764 HYB514400BJ-70 HYB514400BJ-80 HYB51440 |
1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
|
SIEMENS[Siemens Semiconductor Group]
|
| Q67100-Q2012 HYB514400BJ-70 HYB514400BJL-60 HYB514 |
1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM
|
http://
SIEMENS AG
Siemens Semiconductor G...
|
| KM44V4104BK KM44V4104B |
4M x 4Bit CMOS Dynamic RAM
V(cc): -0.5 to 4.6V; 1W; 50mA; 4M x 4-bit CMOS dynamic RAM with extended data out
|
Samsung semiconductor
Samsung Electronic
|
| Q67100-Q2077 Q67100-Q2078 HM72V400 HYM72V4000GS-50 |
4M x 72 Bit ECC DRAM Module
From old datasheet system
4M x 72-Bit Dynamic RAM Module 4M X 72 FAST PAGE DRAM MODULE, 50 ns, DMA168
4M x 72-Bit Dynamic RAM Module 4M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
4M x 72-Bit Dynamic RAM Module 4米72位动态随机存储器模块
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
