| PART |
Description |
Maker |
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| MG800J2YS50A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| MG150J7KS60 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
|
Toshiba Semiconductor
|
| MIG20J906E MIG20J906EA |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
| MIG25Q906H MIG25Q906HA |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
| MIG25Q806H |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
| MIG50J906H |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
| MBM300GS12AW |
IGBT Module Silicon N-Channel IGBT
|
Hitachi
|
| MBN400C33A |
IGBT Module / Silicon N Channel IGBT
Silicon N-channel IGBT
|
HITACHI[Hitachi Semiconductor]
|
| MG150J2YS50 |
TOSHIBA GTR Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| MG200J6ES60 |
TOSHIBA GTR Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| BSM75GD120DN2 075D12N2 C67070-A2516-A67 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
