| PART |
Description |
Maker |
| IRFB4019PBF IRFB4019PBF-15 |
17 A, 150 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Low QRR for Better THD and Lower EMI
Low QRR for Better THD and Lower EMI
|
International Rectifier
|
| 0529910208 52991-0208 |
0.50mm (.020) Pitch SlimStack Receptacle, Surface Mount, Dual Row, Vertical, 3.00and 4.00mm (.118 and .157) Stacking Heights, Lower Circuit Size Version, White, 20Circuits
|
Molex Electronics Ltd.
|
| 0529910308 52991-0308 |
0.50mm (.020) Pitch SlimStack Receptacle, Surface Mount, Dual Row, Vertical, 3.00and 4.00mm (.118 and .157) Stacking Heights, Lower Circuit Size Version, White, 30Circuits
|
Molex Electronics Ltd.
|
| 0541670408 54167-0408 |
0.50mm (.020) Pitch SlimStack Receptacle, Surface Mount, Dual Row, Vertical, 3.00 and 4.00mm (.118 and .157) Stacking Heights, Lower Circuit Size Version, Black, 40Circuits
MOLEX Connector
|
Molex Electronics Ltd.
|
| SYS-4W5120-6U01 |
Ultra Compact & Lower Power MicroATX System with Front-Accessible I/O
|
Advantech Co., Ltd.
|
| LT505-T |
DC, AC, poulsed.. with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit)
|
LEM[LEM]
|
| AP9565GEH AP9565GEJ14 AP9565GEH14 AP9565GEJ |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement, Lower On-resistance
|
Advanced Power Electronics Corp.
|
| AP9412GH AP9412GJ |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Lower Gate Charge, Simple Drive Requirement
|
Advanced Power Electronics Corp.
|
| AP9404GM-HF AP9404GM-HF14 |
Lower Gate Charge, Fast Switching Characteristic
30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
Simple Drive Requirement
|
Advanced Power Electronics Corp.
|
| IDT71V256SA12PZG8 IDT71V256SA12PZGI8 IDT71V256SA12 |
Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)
3.3V, 32K X 8 Static RAM
|
Integrated Device Technology
IDT
|
|
