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MRF21060R3 - 2170 MHz, 60 W, 28 V Lateral N–Channel RF Power MOSFET RF Power Field Effect Transistors

MRF21060R3_850232.PDF Datasheet


 Full text search : 2170 MHz, 60 W, 28 V Lateral N–Channel RF Power MOSFET RF Power Field Effect Transistors
 Product Description search : 2170 MHz, 60 W, 28 V Lateral N–Channel RF Power MOSFET RF Power Field Effect Transistors


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