| PART |
Description |
Maker |
| MG600Q1US61 |
TOSHIBA IGBT Module Silicon N Channel IGBT
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Semiconductor
|
| MG1200V1US51 |
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
TOSHIBA GTR MODULE SILICON N-CHANNEL IGBT
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| MG1200FXF1US51 |
TOSHIBA GTR Module Silicon N-Channel IGBT 东芝滋养模块硅N沟道IGBT
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| MIG50Q6CSB1X |
From old datasheet system
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| C67076-A2510-A67 BSM15GD60DN2 SIEMENSAG-BSM15GD60D |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) 15 A, 600 V, N-CHANNEL IGBT
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BSM75GD120DN2 075D12N2 C67070-A2516-A67 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MG300J2YS50 E002237 |
TOSHIBA GTR MODULE SILICON N CHANNEL 1GBT
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
|
Toshiba Semiconductor
|
| GT5G102 GT5G1022-7B5C |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
5 A, 400 V, N-CHANNEL IGBT
|
Toshiba Semiconductor
|
| GT5J301 GT5J301_07 GT5J30107 |
GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
N CHANNEL IGBT (HIGH POWER SWITCHING MOTOR CONTROL APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| MG150J1BS11 E002085 |
Silicon N channel IGBT(N娌??缁?????????朵?绠?
From old datasheet system
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)
N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
Silicon N channel IGBT(N沟道绝缘栅双极型晶体
|
Toshiba Semiconductor
Toshiba Corporation
|
