| PART |
Description |
Maker |
| IRLML2402GTRPBF |
Generation V Technology
|
International Rectifier
|
| IRLMS6702 IRLMS6702TR |
Generation V Technology HEXFET Power MOSFET
|
International Rectifier
|
| IRF7304PBF IRF7304TRPBF |
Generation V Technology HEXFET Power MOSFET
|
International Rectifier
|
| 8T49N028 |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
| IRF7413GTRPBF IRF7413GPBF |
Generation V Technology Ultra Low On-Resistance
|
International Rectifier
|
| KRF7379 |
Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge
|
TY Semiconductor Co., Ltd
|
| SGB02N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| IRF7304TR |
Generation V Technology -20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| SGB30N6009 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| IRF7389 IRF7389TR |
Generation v technology 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
| SGW30N60HS |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|