| PART |
Description |
Maker |
| MGFK35V2732 K352732 |
12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET
12.7~13.2GHZ BAND 3W INTERNALLY MATCHED GAAS FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC36V6472A04 MGFC36V6472A |
6.4 ~ 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC41V3642_04 MGFC41V3642 |
3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC44V6472 |
6.4-7.2GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC44V6472_97 MGFC44V6472 MGFC44V647297 |
6.4-7.2GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V3742A |
3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V3742_04 MGFC40V3742 MGFC40V374204 |
3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V3742 |
3.7 - 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET 3.7 - 4.2GHz波段16周内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| MGFC45V6472A C456472A |
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SC3904 |
Silicon NPN epitaxial planer type(For 2GHz band low-noise amplification)
|
PANASONIC[Panasonic Semiconductor]
|
| MGFC42V6472 |
6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
6.4-7.2 GHz Band 16W Internally Matched GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
