| PART |
Description |
Maker |
| IRGSL14C40LPBF IRGS14C40LPBF IRGB14C40LPBF |
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
|
IRF[International Rectifier]
|
| M57161L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
HYBRID IC FOR DRIVING TRENCH-GATE IGBT
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 5962-0420401HPC 5962-0420401HYC 5962-0420401HYA HC |
2.0 Amp Output Current IGBT Gate Drive Optocoupler 2.0安培输出电流IGBT栅极驱动光电耦合
5962-0420401HPC · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420401HYA · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420401HYC · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420401HPA · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420401HXA · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5121-300 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5121-200 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5120-300 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5121-100 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5120 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5120-100 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5120-200 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5121 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
|
Ecliptek, Corp.
HIROSE ELECTRIC Co., Ltd.
DB Lectro, Inc.
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| EG3012 |
Power MOS tube / IGBT gate driver chip tube
|
EGmicro
|
| EG3013 |
Power MOS tube / IGBT gate driver chip tube
|
EGmicro
|
| NGB8245N |
Gate?Emitter ESD Protection
|
Littelfuse
|
| IRGMIC50U 1950 |
600V COPACK Hi-Rel IGBT in a TO-259AA package
INSULATED GATE BIPOLAR TRANSISTOR
From old datasheet system
Ultra Fast Speed IGBT
|
IRF[International Rectifier]
|
| LD273 |
TWO CHIP INFRARED EMITTER
|
Siemens Semiconductor Group
|
| FP35R12W2T4B11 |
EasyPIM2B module PressFIT with Trench/Fieldstop IGBT4 and Emitter Controlled 4 Diode
54 A, 1200 V, N-CHANNEL IGBT
|
Infineon Technologies AG
|
| MM118-06L MM118-06F MM118-06 MM018-06L MM118-XX MM |
3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE
3 Phase IGBT Module
|
http://
MICROSEMI[Microsemi Corporation]
|
| IRG4PC60F-P |
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC Solder Plate package
INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
|
IRF[International Rectifier]
|
| IRG4PC60U-P |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC Solder Plate package
|
IRF[International Rectifier]
|
