| PART |
Description |
Maker |
| HB561008AR-20 HB561008A-20 HB561008B-12 HB561008B- |
x8 Fast Page Mode DRAM Module 262114-word x 8 bit dynamic random access memory module 26214-word x 8-bit dynamic random access memory module 262锛?14-word x 8-bit dynamic random access memory module
|
Hitachi,Ltd.
|
| HM514800LJP-7 HM514800LJP-10 HM514800LZP-10 HM5148 |
70ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory 100ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
|
Hitachi Semiconductor
|
| MB8132E-H |
32,768-BIT DYNAMIC RANDOM ACCESS MEMORY
|
Fujitsu
|
| HM5118160B HM5118160BJ-6 HM5118160BJ-7 HM5118160BJ |
1048576-word x 16-bit Dynamic Random Access Memory
|
Hitachi Semiconductor
|
| AK58256AG AK58256AS |
262,144 x 8 bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK58256 |
4,194,304 x 8 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK5328192WP-60 |
8,388,608 by 32 Bit CMOS Dynamic Random Access Memory
|
http:// ACCUTEK MICROCIRCUIT CORPORATION
|
| HM514800CLJ-6 HM514800CLJ-7 HM514800CLJ-8 HM514800 |
524,288-word X 8-bit Dynamic Random Access Memory
|
HITACHI[Hitachi Semiconductor]
|
| AK594096BGP-70 AK594096BG AK594096BS AK594096BSP-6 |
4,194,304 Word by 9 Bit CMOS Dynamic Random Access Memory
|
http:// ACCUTEK MICROCIRCUIT CORPORATION
|
| AK594096AG AK594096AS |
4,194,304 Word x 9 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK59256AG AK59256AS |
262,144 Word by 9 bit, CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|