| PART |
Description |
Maker |
| RHRP640CC FN4464 RHRP660CC RHRP650CC |
6A, 600V Ultrafast Dual Diodes(6A, 600V 瓒?揩??????)
6A/ 400V - 600V Hyperfast Dual Diodes
6A, 600V Ultrafast Dual Diodes(6A, 600V 超快双二极管)
6A, 400V - 600V Hyperfast Dual Diodes
From old datasheet system
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
|
| CSFMT108-HF |
Halogen Free Super Fast Recovery Rectifiers, V-RRM=600V, V-DC=600V, I-(AV)=1A
|
Comchip Technology
|
| RHRD660S FN3746 RHRD660 |
6A, 600V Hyperfast Diodes(6A,600V 超快速二极管)
6A/ 600V Hyperfast Diodes
6A 600V Hyperfast Diodes
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| ISL9R460PF2 ISL9R460PF2NL |
4A, 600V Stealth ™, Diode, TO-220F Package
4A, 600V Stealth Diode
From old datasheet system
4A / 600V Stealth Diode
|
Fairchild Semiconductor
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRG4BC20S |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)
|
IRF[International Rectifier]
|
| IRG4BC20U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
|
IRF[International Rectifier]
|
| SSU2N60B SSR2N60B SSR2N60 SSU2N60BTU SSR2N60BTF SS |
600V N-Channel MOSFET
600V N-Channel MOSFET 1.8 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
600V N-Channel B-FET / Substitute of SSU2N60A
600V N-Channel B-FET / Substitute of SSR2N60A
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRG4PC40FD IRG4PC40 IRG4PC40FDPBF |
600V Fast 1-8 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
|
IRF[International Rectifier]
|
| FQD3N60CTMWS FQU3N60C |
N-Channel QFETMOSFET 600V, 2.4A, 3.4
N-Channel QFET® MOSFET 600V, 2.4A, 3.4Ohms
|
Fairchild Semiconductor
|
| STB4NC60 8256 STB4NC60T4 |
INTEGRATED EC000 MPU N沟道600V 1.8ohm - 4.2A D2PAK封装MOSFET的第二PowerMesh
N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh?II MOSFET
N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET
From old datasheet system
N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh⑩II MOSFET
N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IRFIBC40G IRFIBC40 IRFIBC40GPBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A)
Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=3.5A)
|
IRF[International Rectifier]
|
