| PART |
Description |
Maker |
| 3SK309 |
Silicon N Channel MOS FET
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
|
Hitachi Semiconductor
|
| 2SJ517 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ483 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| 4AJ11 |
Silicon P-Channel Power MOS FET Array
FET Arrays
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| MMFT2N25E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MTH8N50E |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
| MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 600 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| 2SK3719 |
N-CHANNEL Silicon J-FET
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
|
NEC[NEC]
|
| 2SK808A 2SK808 |
Silicon N-channel Power F-MOS FET
Silicon N Channel Power FMOS FET
|
Panasonic Semiconductor
|
