| PART |
Description |
Maker |
| IRF7807VD2PBF |
Co-Pack N-channel HEXFET? Power MOSFET and Schottky Diode
FETKY MOSFET / SCHOTTKY DIODE
|
International Rectifier
|
| MBR0530T1 MBR0530T3 MBR0530LT1 ON0406 06F9814 MBR0 |
From old datasheet system
SURFACE MOUNT SCHOTTKY POWER RECTIFIER
MOSFET N-CH 500V 5A D2-PAK
(MBR0530T1 / MBR0530T3) SCHOTTKY BARRIER RECTIFIER 0.5 AMPERES 30 VOLTS
DIODE SCHOTTKY 0.5A
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
|
| STK30NHS3LL |
N-channel 30 V - 0.0028 Ω - 30 A - PolarPAK? STripFET Power MOSFET plus monolithic Schottky
N-channel 30 V - 0.0028 ヘ - 30 A - PolarPAK㈢ STripFET⑩ Power MOSFET plus monolithic Schottky
|
STMicroelectronics
|
| IRF7322D1 |
MOSFET Schottky Diode ( VDSS = -20V , RDS(on) = 0.058W , Schottky Vf = 0.39V )
FETKY? MOSFET / Schottky Diode
|
International Rectifier
|
| NTLJF3117PTAG |
Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, uCool Package 2.3 A, 20 V, 0.135 ohm, P-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| DMG4710SSS-13 |
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
8.8 A, 30 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET GREEN, PLASTIC, SOP-8
|
Diodes Incorporated
Diodes, Inc.
|
| DMS3015SSS-13 DMS3015SSS |
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
11 A, 30 V, 0.0119 ohm, N-CHANNEL, Si, POWER, MOSFET GREEN, PLASTIC, SOP-8
|
Diodes Incorporated
Diodes, Inc.
|
| IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
Vishay Intertechnology, Inc.
|
| SI6821DQ |
P-Ch, Reduced Qg, Fast Switching MOSFET Schottky Diode
From old datasheet system
P-Channel Reduced Qg / MOSFET with Schottky Diode
P-Channel, Reduced Qg, MOSFET with Schottky Diode P沟道，减Qg和与MOSFET的肖特基二极
|
Vishay Siliconix
Vishay Intertechnology, Inc.
|
|
