| PART |
Description |
Maker |
| NB6L11DG NB6L11_06 NB6L11 NB6L11D NB6L11DR2 NB6L11 |
2.5 V/3.3 V Multilevel Input to Differential LVPECL/LVNECL 1:2 Clock or Data Fanout Buffer/Translator
|
ONSEMI[ON Semiconductor]
|
| NBSG16M |
2.5V/3.3VMultilevel Input to CML Clock/Data Receiver/Driver/Translator Buffer(2.5V/3.3V多级输入到CML时钟/数据接收驱动转换缓冲 2.5V/3.3V的多级白血病的输入时钟/数据接收驱动翻译缓冲区（2.5V/3.3V的多级输入到白血病时数据接收驱动转换缓冲器）
|
ON Semiconductor
|
| 5429FCT520CTD 5429FCT520CTDB 5429FCT520CTE 5429FCT |
CONNECTOR ACCESSORY 连接器附
MULTILEVEL PIPELINE REGISTERS 多级管道登记
MULTILEVEL PIPELINE REGISTERS
|
Integrated Device Techn...
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
http://
|
| NB6L11DT NB6L11DG |
2.5 V/3.3 V Multilevel Input to Differential LVPECL/LVNECL 1:2 Clock or Data Fanout Buffer/Translator 6L SERIES, LOW SKEW CLOCK DRIVER, 2 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO8
|
Rectron Semiconductor
|
| ILC5140XCS ILC5140 |
CMOS MULTILEVEL VOLTAGE DETECTOR 多级电压检测器的CMOS
|
IMPALA[Impala Linear Corporation]
|
| M58PR512LE M58PR512LE96ZAC5 M58PR512LE96ZAD5 M58PR |
512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
Numonyx B.V
|
| NAND16GW3C4A NAND08GW3C4AN1E NAND16GW3C4AN1E NAND0 |
8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
Numonyx B.V
|
| M58LT256JST8ZA6T M58LT256JSB M58LT256JSB8ZA6 M58LT |
256 Mbit (16 Mb 】 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| M58LR128KT855 M58LR256KT855 M58LR128KT705 M58LR256 |
128 or 256 Mbit (】16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
|
Numonyx B.V
|
| CY29FCT520ATDMB |
<font color=red>[Old version datasheet]</font> MULTILEVEL PIPELINE REGISTER WITH 3-STATE OUTPUTS
|
TI store
|
| M58PV001LE96ZB5 M58PR001LE M58PR001LE96ZB5 M58PR25 |
256-Mbit, 512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
