| PART |
Description |
Maker |
| NAND04G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，4千兆位，8千兆112 Byte/1056字的页面.8V/3V，NAND闪存
|
STMicroelectronics N.V.
|
| NAND01G-N NAND01GR4N5 NAND01GR3N6 |
1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| IS29GL256H-70SLA IS29GL256L-70FLA IS29GL256H-70FLV |
16-word/32-byte page read buffer
|
Integrated Silicon Solu...
|
| AT28HC256 |
256K EEPROM with 64-Byte Page & Software Protection
|
Atmel
|
| AT28C256 |
256K EEPROM with 64-Byte Page & Software Protection
|
Atmel
|
| AT28HC64BNBSP AT28HC64B |
64K EEPROM with 64-Byte Page & Software Data Protection
From old datasheet system
|
Atmel Corp
|
| AT28C040 |
4M bit EEPROM with 256-Byte Page & Software Data Protection
|
Atmel
|
| LC322271J LC322271T-70 LC322271T-80 LC322271M |
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode / Byte Write
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
SANYO[Sanyo Semicon Device]
|
| AT28C040NBSP AT28C040 |
4M bit EEPROM with 256-Byte Page & Software Data Protection
From old datasheet system
|
Atmel Corp
|
| MSM511664C |
65536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE (BYTE WRITE)
|
OKI electronic componets
|
