| PART |
Description |
Maker |
| MRF18090A MRF18090AS |
MRF18090A, MRF18090AS 1.80-1.88 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs
1.80 - 1.88 GHz 90 W 26 V LATERAL N-CHANNEL RF POWER MOSFETS
1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS
|
Motorola, Inc
MOTOROLA[Motorola Inc]
|
| MRF18030BR3 MRF18030BSR3 MRF1803BR3 MRF1803BSR3 MR |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
|
Motorola, Inc
|
| MRF184S MRF184 MRF184D |
MRF184R1, MRF184SR1 1 GHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFET
LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
|
| EVAL-ADG936EB ADG936 ADG936BCP ADG936BCP-500RL7 AD |
Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT 宽带4千兆赫，36千兆赫的CMOS 1.65 V分贝.75 V的隔离，双路SPDT
Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, QCC20
|
AD[Analog Devices]
Analog Devices, Inc.
ANALOG DEVICES INC
|
| ADG904BRUZ |
Wideband 2.5 GHz, 37 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 4:1 Mux/SP4T 4-CHANNEL, SGL ENDED MULTIPLEXER, PDSO20
|
Analog Devices, Inc.
|
| MRF18060BSR3 MRF18060BLSR3 MRF18060BR3 MRF18060B |
1.90?1.99 GHz, 60 W, 26 V Lateral N?Channel RF Power MOSFET
From old datasheet system
|
Motorola
|
| RMWP23001 |
23 GHz Power Amp
21-24 GHz Power Amplifier MMIC
|
FAIRCHILD[Fairchild Semiconductor]
|
| ATF-46171 |
2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化FET)
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| FMPA2151 |
2.4-2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power Amplifier Module
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| PE6800 PE6800-16 |
0.5 Watts Low Power WR-28 Waveguide Load 26.5 GHz to 40 GHz
|
Pasternack Enterprises,...
|
