| PART |
Description |
Maker |
| M40Z300W 5679 |
NVRAM CONTROLLER for up to EIGHT LPSRAM
From old datasheet system
|
STMicro
|
| AN1021 |
A CONTROLLER TO GAIN NVRAM FUNCTIONALITY FROM TWO 128K X16 BLOCKS OF SRAM
|
SGS Thomson Microelectronics
|
| M41ST87W11 M41ST87WSS6F |
Serial real-time clock (RTC) supervisor
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM
|
ST Microelectronics
STMicroelectronics
|
| BZX84C2V4LT1 SOT-23 BZX84C2V4LT1THRUBZX84C75LT1 BZ |
Zener Voltage Regulator Didoes
CONTACT ELEC CONNECTOR
RECEPTACLE,CONN 6POS STRT
225 mW SOT-23 Zener Voltage Regulator Diodes 24 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM 225毫瓦的SOT - 23封装稳压稳压二极
|
Motorola Inc
Motorola, Inc.
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| M40Z300MH1E M40Z300MH1F M40Z300MH6E M40Z300MH6F M4 |
5 V or 3 V NVRAM supervisor for up to 8 LPSRAMs
|
STMicroelectronics
|
| M40SZ100Y07 M4Z28-BR00SH M40SZ100W M40SZ100Y |
5V or 3V NVRAM supervisor for LPSRAM
|
http://
STMicroelectronics
|
| AN1011 |
BATTERY TECHNOLOGY USED IN NVRAM PRODUCTS FROM ST
|
SGS Thomson Microelectronics
|
| DS1235AB-200 DS1235Y-120 DS1235AB-150 DS1235Y-200 |
NVRAM (Battery Based) NVRAM中（基于电池
|
TE Connectivity, Ltd.
|
| DS1650Y-70-IND DS1650Y-100-IND DS1650Y-85-IND DS16 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Bourns, Inc.
Maxim Integrated Products, Inc.
|
| M41T11MH6E M41T11MH6F M41T11M6E M41T11M6F |
Serial real-time clock with 56 bytes of NVRAM
|
STMicroelectronics
|
| AN1336 |
POWER-FAIL COMPARATOR NVRAM SUPERVISORY DEVICES
|
SGS Thomson Microelectronics
ST Microelectronics
|
